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RF Planar Inductor Electrical Performances on n-Type Porous 4H Silicon Carbide

✍ Scribed by Gautier, G.; Capelle, M.; Billoue, J.; Cayrel, F.; Poveda, P.

Book ID
114572667
Publisher
IEEE
Year
2012
Tongue
English
Weight
264 KB
Volume
33
Category
Article
ISSN
0741-3106

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## Abstract This research investigated the electrical characteristics of CeO~__x__~ thin films deposited on n‐type 4H‐SiC via RF‐magnetron sputtering technique. Postdeposition annealing of CeO~__x__~ was performed at different annealing temperatures (400, 600, 800, and 1000 °C) for 30 min in an arg