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Improved microwave performance of spiral inductors on Si substrates by chemically anodizing a porous silicon layer

✍ Scribed by Ming-Jie Yu; Yi-Jen Chan; Li-Hong Laih; Jyh-Wong Hong


Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
114 KB
Volume
26
Category
Article
ISSN
0895-2477

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✦ Synopsis


Spiral inductors ha¨e been e¨aluated on Si substrates by inserting a porous Si layer for the application of MMICs. This high-resis-ti¨e porous Si layer pro¨ides a low substrate loss and a low coupling effect. Spiral inductors fabricated on this layer achie¨e better Q-and inductance ¨alues. A 9.7 nH inductance can be obtained with a Q-¨alue of 3.6 for a 4.5-turn inductor.