𝔖 Bobbio Scriptorium
✦   LIBER   ✦

High performance of graphene oxide-doped silicon oxide-based resistance random access memory

✍ Scribed by Zhang, Rui; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Chen, Kai-Huang; Lou, Jen-Chung; Chen, Jung-Hui; Young, Tai-Fa; Shih, Chih-Cheng; Yang, Ya-Liang; Pan, Yin-Chih; Chu, Tian-Jian; Huang, Syuan-Yong; Pan, Chih-Hung; Su, Yu-Ting; Syu, Yong-En; Sze, Simon M

Book ID
121529908
Publisher
Springer-Verlag
Year
2013
Tongue
English
Weight
484 KB
Volume
8
Category
Article
ISSN
1931-7573

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Improved switching characteristics of pe
Improved switching characteristics of perovskite oxide-based resistance random access memory by high-pressure oxygen annealing at low temperature
✍ Lee, Wootae ;Jo, Minseok ;Park, Jubong ;Lee, Joonmyoung ;Park, Sangsu ;Kim, Seon πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons 🌐 English βš– 278 KB

## Abstract We successfully fabricated perovskite oxide‐based resistance random access memory (RRAM) with improved resistance switching characteristics, at a low temperature. A high‐pressure oxygen‐annealed (HPOA) W/Al/Pr~0.7~Ca~0.3~MnO~3~ (PCMO)/Pt device shows good memory characteristics such as