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High performance of diamond p[sup +]-i-n[sup +] junction diode fabricated using heavily doped p[sup +] and n[sup +] layers

โœ Scribed by K. Oyama; S. Ri; H. Kato; M. Ogura; T. Makino; D. Takeuchi; N. Tokuda; H. Okushi; S. Yamasaki


Book ID
124167463
Publisher
American Institute of Physics
Year
2009
Tongue
English
Weight
392 KB
Volume
94
Category
Article
ISSN
0003-6951

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Carrier transport of diamond p+-i-n+ jun
โœ Oyama, Kazuhiro ;Ri, Sung-Gi ;Kato, Hiromitsu ;Takeuchi, Daisuke ;Makino, Toshih ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 481 KB

## Abstract We have investigated the carrier transport of a singleโ€crystal diamond p^+^โ€iโ€n^+^ junction diode fabricated using lowโ€resistance hopping p^+^ and n^+^ layers, which showed highโ€performance diode characteristics. By comparing the diode characteristics of the p^+^โ€iโ€n^+^ junction with th