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Carrier transport of diamond p+-i-n+ junction diode fabricated using low-resistance hopping p+ and n+ layers

✍ Scribed by Oyama, Kazuhiro ;Ri, Sung-Gi ;Kato, Hiromitsu ;Takeuchi, Daisuke ;Makino, Toshiharu ;Ogura, Masahiko ;Tokuda, Norio ;Okushi, Hideyo ;Yamasaki, Satoshi

Publisher
John Wiley and Sons
Year
2011
Tongue
English
Weight
481 KB
Volume
208
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

We have investigated the carrier transport of a single‐crystal diamond p^+^‐i‐n^+^ junction diode fabricated using low‐resistance hopping p^+^ and n^+^ layers, which showed high‐performance diode characteristics. By comparing the diode characteristics of the p^+^‐i‐n^+^ junction with those of the p^+^‐n^+^ diode and metal/n^+^/metal structure, the following results were obtained. The carrier transport of the p^+^‐i‐n^+^ junction is described using the band conduction caused by the free carriers, although the current transport in both p^+^ and n^+^ layers is mainly by the hopping conduction. The i‐layer in the p^+^‐i‐n^+^ junction provides a low‐resistance layer for the forward current and a good blocking layer for the reverse current. The contact resistance of the n^+^/metal layer affects the carrier transport of the p^+^‐i‐n^+^ diode, which lacks the ohmic property even with the phosphorous concentration around 10^20^ cm^−3^.

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