High-Performance In0.5Ga0.5 As/GaAs Quantum-Dot Lasers on Silicon With Multiple-Layer Quantum-Dot Dislocation Filters
β Scribed by Jun Yang; Bhattacharya, P.; Zetian Mi
- Book ID
- 114618944
- Publisher
- IEEE
- Year
- 2007
- Tongue
- English
- Weight
- 320 KB
- Volume
- 54
- Category
- Article
- ISSN
- 0018-9383
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π SIMILAR VOLUMES
Photocurrent spectroscopy is used to investigate the quantum-confined Stark shift, QCSS, of In 0.5 Ga 0.5 As/GaAs self-assembled quantum dots (QDs) grown on (100) and (311)B planes. An asymmetric dependence of the QCSS with respect to the direction of the electric field is observed in both cases. We
We report on round quantum dots grown on InP (100) substrate, which emit around 1.55 mm. At 10 K the full width at half maximum is as small as 28 meV, attesting a rather uniform size distribution. The carrier lifetimes are almost the same across the whole photoluminescence band, indicating the good