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High-k Gate Dielectrics for CMOS Technology (HE:HIGH-K DIELECTRICS O-BK) || Scaling and Limitation of Si-Based CMOS

โœ Scribed by He, Gang; Sun, Zhaoqi


Book ID
120474438
Publisher
Wiley-VCH Verlag GmbH & Co. KGaA
Year
2012
Weight
441 KB
Category
Article
ISBN
3527330321

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A novel approach for determining the eff
โœ C.L Hinkle; C Fulton; R.J Nemanich; G Lucovsky ๐Ÿ“‚ Article ๐Ÿ“… 2004 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 224 KB

There has been a search for alternative dielectrics with significantly increased dielectric constants, K, which increases physical thickness in proportion to K, and therefore would significantly reduce direct tunneling. However, increases in K to values of 15-25 in transition metal and rare earth ox