High-k dielectrics by UV photo-assisted chemical vapour deposition

✍ Scribed by Q. Fang; J.Y. Zhang; Z.M. Wang; G. He; J. Yu; Ian W. Boyd

• Book ID: 104305819
• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 426 KB
• Volume: 66
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(02)00974-7

✦ Synopsis

An overview of our recent work on thin films of metal oxides deposited on silicon by a novel excimer lamp-assisted ultraviolet injection liquid source CVD (UVILS-CVD) process for advanced high-k gate dielectrics applications will be presented. Recent results on TiO , Ta O , ZrO , HfO , and TiO -doped Ta O 2 2 5 2 2 2 2 5

will be demonstrated. The physical, structural, surface and interfacial properties and electrical characterisation of the as-deposited and UV-annealed new high dielectric constant (high-k) materials, determined using ellipsometry, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, UV spectrophotometry, SEM, TEM and C-V, I-V measurements, showed that good quality layers could be produced. The investigation of high-k dielectrics grown by the UVILS-CVD process clearly demonstrates that low cost, high power density excimer lamp systems can provide an interesting alternative to conventional UV lamps and excimer lasers for industrial large-scale low temperature materials processing. UVILS-CVD is a promising technique for the controlled deposition of ultra-thin high-k metal-oxide dielectrics for deep sub-micron CMOS devices at temperatures as low as 350 8C.