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Plasma-assisted chemical vapour deposition of diamond by hollow cathode arc discharge

โœ Scribed by J. Stiegler; S. Roth; K. Hammer; W. Scharff


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
316 KB
Volume
219
Category
Article
ISSN
0040-6090

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We have investi ated the effects of reactant residence time on the properties of microwav+a88isted CV % diamond films. Using a constant process pressure of 40 Torr and gas composition of 1% CHb in Hr? the total gas flow rate was adjusted from 25 to 800 seem. For OUT reactor, this correspond8 to res