High Pressure as a Tool to Study Electro
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R.J.A. Hill; I.E. Itskevich; S.T. Stoddart; H.M. Murphy; A.S.G. Thornton; P.C. M
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Article
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2001
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John Wiley and Sons
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English
β 98 KB
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We have used high pressure to investigate resonant tunnelling in a single-barrier, n-i-n GaAs/ AlAs/GaAs diode with an embedded layer of InAs self-assembled quantum dots (SAQD). We have obtained convincing evidence for resonant tunnelling through individual G-valley-related electron states that we a