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High Pressure as a Tool to Study Electron Localization

✍ Scribed by R.J.A. Hill; I.E. Itskevich; S.T. Stoddart; H.M. Murphy; A.S.G. Thornton; P.C. Main; L. Eaves; M. Henini; D.K. Maude; J.-C. Portal

Publisher: John Wiley and Sons
Year: 2001
Tongue: English
Weight: 98 KB
Volume: 223
Category: Article
ISSN: 0370-1972
DOI: 10.1002/1521-3951(200101)223:2<555::aid-pssb555>3.0.co;2-i

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✦ Synopsis

We have used high pressure to investigate resonant tunnelling in a single-barrier, n-i-n GaAs/ AlAs/GaAs diode with an embedded layer of InAs self-assembled quantum dots (SAQD). We have obtained convincing evidence for resonant tunnelling through individual G-valley-related electron states that we associate with the SAQD. The tunnel current through a SAQD was used as a local probe of a localized phase of a two-dimensional electron system in the accumulation layer of the diode. We have found evidence that at low densities, the localized electrons form relatively large, high-density clusters.

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