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High energy ion implantation into diamond and cubic boron nitride

✍ Scribed by Alexander M. Zaitsev


Book ID
113282158
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
919 KB
Volume
62
Category
Article
ISSN
0168-583X

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High energy ion implantation into diamon
✍ Alexander M. Zaitsev πŸ“‚ Article πŸ“… 1992 πŸ› Elsevier Science 🌐 English βš– 970 KB

The influence of ion implantation on diamond and cubic boron nitride is discussed. It is shown that high energy ion implantation (0.5 MeV nucleon-~ and higher) is a promising ion beam method of modification causing new effects in the superstrong semiconductors: (1) formation of multilayer impurity-d