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Ion energy thresholds and stability of cubic boron nitride

✍ Scribed by Eyhusen, S.; Gerhards, I.; Hofsäss, H.; Ronning, C.; Blomenhofer, M.; Zweck, J.; Seibt, M.

Book ID
123535568
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
476 KB
Volume
12
Category
Article
ISSN
0925-9635

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High energy ion implantation into diamon
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✍ Alexander M. Zaitsev 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 970 KB

The influence of ion implantation on diamond and cubic boron nitride is discussed. It is shown that high energy ion implantation (0.5 MeV nucleon-~ and higher) is a promising ion beam method of modification causing new effects in the superstrong semiconductors: (1) formation of multilayer impurity-d