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High energy electron irradiation of ion implanted MOS structures with different oxide thickness

✍ Scribed by S. Kaschieva; S. Alexandrova

Book ID
114164455
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
116 KB
Volume
174
Category
Article
ISSN
0168-583X

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✍ Tomasz BroΕΌek; Eric B. Lum; Chand R. Viswanathan πŸ“‚ Article πŸ“… 1997 πŸ› Elsevier Science 🌐 English βš– 291 KB

Hole trapping in the gate oxide of MOS devices causes instabilities of device parameters and serious reliability problems in MOS transistors and memories. In this work, hole traps, generated by high-field electron injection, are studied in thermal oxides in the thickness range below 10 nm. PMOS tran