High dielectric constant TiO2 film grown on polysilicon by liquid phase deposition

✍ Scribed by Ming-Kwei Lee; Hung-Chang Lee; Chih-Min Hsu

• Book ID: 103846612
• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 432 KB
• Volume: 10
• Category: Article
• ISSN: 1369-8001
• DOI: 10.1016/j.mssp.2007.06.002

✦ Synopsis

In this study, titanium dioxide (TiO 2 ) films were grown on polycrystalline silicon by liquid phase deposition (LPD) with ammonium hexafluoro-titanate and boric acid as sources. The film structure is amorphous as examined by X-ray diffraction (XRD). A uniform composition of LPD-TiO 2 was observed by SIMS examination. The leakage current density of an Al/LPD-TiO 2 /poly-Si/p-type Si metal-oxide-semiconductor (MOS) structure is 1.9 A/cm 2 at the negative electric field of 0.7 MV/cm. The dielectric constant is 29.5 after O 2 annealing at 450 1C. The leakage current densities can be improved effectively with a thermal oxidized SiO 2 added at the interface of LPD-TiO 2 /poly-Si. The leakage current density can reach 3.1 Â 10 À4 A/cm 2 at the negative electric field of 0.7 MV/cm and the dielectric constant is 9.8.