𝔖 Bobbio Scriptorium
✦   LIBER   ✦

High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed Memory Devices

✍ Scribed by Meng-Han Lin; Ming-Chi Wu; Yi-Han Huang; Chen-Hsi Lin; Tseung-Yuen Tseng

Book ID
114620365
Publisher
IEEE
Year
2011
Tongue
English
Weight
990 KB
Volume
58
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Improved switching characteristics of pe
Improved switching characteristics of perovskite oxide-based resistance random access memory by high-pressure oxygen annealing at low temperature
✍ Lee, Wootae ;Jo, Minseok ;Park, Jubong ;Lee, Joonmyoung ;Park, Sangsu ;Kim, Seon πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons 🌐 English βš– 278 KB

## Abstract We successfully fabricated perovskite oxide‐based resistance random access memory (RRAM) with improved resistance switching characteristics, at a low temperature. A high‐pressure oxygen‐annealed (HPOA) W/Al/Pr~0.7~Ca~0.3~MnO~3~ (PCMO)/Pt device shows good memory characteristics such as