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High-Current-Gain Direct-Growth GaN/InGaN Double Heterojunction Bipolar Transistors

✍ Scribed by Yi-Che Lee; Yun Zhang; Hee-Jin Kim; Suk Choi; Lochner, Z.; Dupuis, R.D.; Jae-Hyun Ryou; Shyh-Chiang Shen

Book ID
114620152
Publisher
IEEE
Year
2010
Tongue
English
Weight
569 KB
Volume
57
Category
Article
ISSN
0018-9383

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## Abstract We report ultra‐high‐power performance on __npn__ GaN/InGaN double heterojunction bipolar transistors (DHBTs) that is directly grown on a free‐standing (FS) GaN substrate. Measured common‐emitter current gain (__h__~fe~) reaches 80. A quasi‐static __I__–__V__ measurement shows that __J_