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Transport and noise in GaAs/AlGaAs heterojunction bipolar transistors. I. Transport and high current gain

โœ Scribed by Day, D.J.; Jue, S.C.; Margittai, A.; Houston, P.A.

Book ID
114535367
Publisher
IEEE
Year
1989
Tongue
English
Weight
573 KB
Volume
36
Category
Article
ISSN
0018-9383

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We investigated the current gain deterioration in carbon-doped AIGaAs/GaAs heterojunction bipolar transitors (HBTs). Bias stress tests showed that mechanical stress can accelerate the gain reduction, since HBTs with a thicker SiN passivation layer have a shorter device life. The longest life was obt