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Excess noise in AlGaAs/GaAs heterojunction bipolar transistors and associated TLM test structures

โœ Scribed by Delseny, C.; Pascal, F.; Jarrix, S.; Lecoy, G.; Dangla, J.; Dubon-Chevallier, C.


Book ID
114535920
Publisher
IEEE
Year
1994
Tongue
English
Weight
641 KB
Volume
41
Category
Article
ISSN
0018-9383

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We investigated the current gain deterioration in carbon-doped AIGaAs/GaAs heterojunction bipolar transitors (HBTs). Bias stress tests showed that mechanical stress can accelerate the gain reduction, since HBTs with a thicker SiN passivation layer have a shorter device life. The longest life was obt