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High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates

✍ Scribed by Xing, H.; Dora, Y.; Chini, A.; Heikman, S.; Keller, S.; Mishra, U.K.

Book ID: 120267588
Publisher: IEEE
Year: 2004
Tongue: English
Weight: 168 KB
Volume: 25
Category: Article
ISSN: 0741-3106
DOI: 10.1109/LED.2004.824845

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