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High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

✍ Scribed by Dora, Y.; Chakraborty, A.; McCarthy, L.; Keller, S.; DenBaars, S.P.; Mishra, U.K.

Book ID: 115503026
Publisher: IEEE
Year: 2006
Tongue: English
Weight: 220 KB
Volume: 27
Category: Article
ISSN: 0741-3106
DOI: 10.1109/led.2006.881020

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