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HF chemical etching of SiO2on 4H and 6H SiC

✍ Scribed by M. B. Johnson; M. E. Zvanut; Otha Richardson


Book ID
107452433
Publisher
Springer US
Year
2000
Tongue
English
Weight
126 KB
Volume
29
Category
Article
ISSN
0361-5235

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Electrochemistry of anodic etching of 4H
✍ D.H. van Dorp; J.J.H.B. Sattler; J.H. den Otter; J.J. Kelly πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 346 KB

Electrochemical etching of single-crystal SiC rotating disk electrodes in fluoride solution was studied at pH 3. Anodic dissolution and passivation are observed for p-type electrodes in the dark and for n-type electrodes under illumination. The dissolution of p-type (0 0 0 1) 4H-SiC is found to be u