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Heteroepitaxial growth and ESR evaluation of 3C-SiC

✍ Scribed by H. Nagasawa; Y. Yamaguchi; T. Izumi; K. Tonosaki


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
290 KB
Volume
70-71
Category
Article
ISSN
0169-4332

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## Abstract This article describes growth and characterization of the highest quality reproducible 3C‐SiC heteroepitaxial films ever reported. By properly nucleating 3C‐SiC growth on top of perfectly on‐axis (0001) 4H‐SiC mesa surfaces completely free of atomic scale steps and extended defects, gro