✦ LIBER ✦

HEMT parameter extraction combining optimization and direct parasitic extraction

✍ Scribed by S. Vandenberghe; D. Schreurs; K. Van der Zanden; G. Carchon; B. Nauwelaers; W. De Raedt

Publisher: John Wiley and Sons
Year: 2000
Tongue: English
Weight: 173 KB
Volume: 10
Category: Article
ISSN: 1096-4290
DOI: 10.1002/(sici)1099-047x(200001)10:1<81::aid-mmce9>3.0.co;2-p

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✦ Synopsis

A new technique for high electron mobility transistor (HEMT) equivalent circuit identification is presented. The optimization problem is reformulated as an overdetermined set of equations. Thus, equations used in direct parasitic extraction can be added in a straightforward way and a measure for error propagation is available. The method is used to identify a 17-element small-signal equivalent circuit.

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