Silicon carbide (SiC) is a very promising material for future electronic devices. Also it is an attractive material for space applications, that require long-term endurance and higher efficiency, where tolerance to space radiations is a major problem. In this study, we have performed some irradiatio
β¦ LIBER β¦
Heavy-Ion Induced Anomalous Charge Collection From 4H-SiC Schottky Barrier Diodes
β Scribed by Makino, Takahiro; Deki, Manato; Iwamoto, Naoya; Onoda, Shinobu; Hoshino, Norihiro; Tsuchida, Hidekazu; Hirao, Toshio; Ohshima, Takeshi
- Book ID
- 121824099
- Publisher
- IEEE
- Year
- 2013
- Tongue
- English
- Weight
- 311 KB
- Volume
- 60
- Category
- Article
- ISSN
- 0018-9499
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