$ hbox{Al}_{2}hbox{O}_{3}$ Gate Insulators]]>

✍ Scribed by Corrion, A. L.; Shinohara, K.; Regan, D.; Milosavljevic, I.; Hashimoto, P.; Willadsen, P. J.; Schmitz, A.; Kim, S. J.; Butler, C. M.; Brown, D.

• Book ID: 126859970
• Publisher: IEEE
• Year: 2011
• Tongue: English
• Weight: 398 KB
• Volume: 32
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/led.2011.2155616