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Comparative Study of the Low-Frequency-Noise Behaviors in a-IGZO Thin-Film Transistors With $\hbox{Al}_{2}\hbox{O}_{3}$ and $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{SiN}_{x}$ Gate Dielectrics

✍ Scribed by In-tak Cho; Woo-seok Cheong; Chi-sun Hwang; Jeong-min Lee; Hyuck-in Kwon; Jong-ho Lee


Book ID
126607395
Publisher
IEEE
Year
2009
Tongue
English
Weight
410 KB
Volume
30
Category
Article
ISSN
0741-3106

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