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Growth, structure, and stoichiometry of epitaxial Cu-III-VI2 films on CaF2 substrates

✍ Scribed by Dr. B. Schumann; Dr. G. Kühn


Publisher
John Wiley and Sons
Year
1984
Tongue
English
Weight
390 KB
Volume
19
Category
Article
ISSN
0232-1300

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Growth and electrical properties of epit
✍ Doz. Dr. sc. H. Neumann; Dr. B. Schumann; Dipl.-Phys. D. Peters; Dr. A. Tempel; 📂 Article 📅 1979 🏛 John Wiley and Sons 🌐 English ⚖ 872 KB

A-oriented GaAs substrates by flash evaporation in the substrate temperature range Tsub = 570 ... 870 K. Epitaxialgrowth begins at Tsub = 645 K. The films had always the chalcopyrite structure. Indications to a transition from the chalcopyrite phase to the sphalerite phase were observed at Tsub = 87