Growth simulation of ternary quantum structures and their optical properties
✍ Scribed by F. Große; R. Zimmermann
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 333 KB
- Volume
- 17
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
Interface roughness and alloy disorder are known to influence the optical linewidths of quantum structures. A simple model is used to simulate the growth process in molecular beam epitaxy. The relation of different growth temperatures to interface structure and optical properties is shown by calculating the exciton lineshape using simulated structures. The inherent exciton averaging can lead to broader and more structured lineshapes for apparently better grown samples.
📜 SIMILAR VOLUMES
In this paper, we report on the growth of GaN films and AlGaN/GaN multiple quantum wells (MQWs) on Si(111) substrates by molecular beam epitaxy using ammonia as nitrogen source. A smooth layer-by-layer two-dimensional growth mode allows to obtain reflection high-energy electron diffraction intensity