MBE growth of GaAs nanometer-scale ridge quantum wire structures and their structural and optical characterizations
β Scribed by S. Koshiba; H. Noge; H. Ichinose; H. Akiyama; Y. Nakamura; T. Inoshita; T. Someya; K. Wada; A. Shimizu; H. Sakaki
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 660 KB
- Volume
- 37
- Category
- Article
- ISSN
- 0038-1101
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Interface roughness and alloy disorder are known to influence the optical linewidths of quantum structures. A simple model is used to simulate the growth process in molecular beam epitaxy. The relation of different growth temperatures to interface structure and optical properties is shown by calcula