Optical properties and device prospects of ZnSe-based quantum structures
β Scribed by A.V. Nurmikko; R.L. Gunshor; M. Kobayashi
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 810 KB
- Volume
- 117
- Category
- Article
- ISSN
- 0022-0248
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This paper describes structural and optical investigations of molecular beam epitaxy grown strained ZnSe/(Zn,Cd)Se quantum wells. Strain state, cadmium content, and quantum well layer thickness have a strong influence on the emission energy, which allows a luminescence tuning between 2.25 and 2.50 e
Interface roughness and alloy disorder are known to influence the optical linewidths of quantum structures. A simple model is used to simulate the growth process in molecular beam epitaxy. The relation of different growth temperatures to interface structure and optical properties is shown by calcula