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Structural and Optical Investigations of ZnSe Based Semiconductor Microcavities

✍ Scribed by Pawlis, A. ;Husberg, O. ;Khartchenko, A. ;Lischka, K. ;Schikora, D.

Publisher: John Wiley and Sons
Year: 2001
Tongue: English
Weight: 115 KB
Volume: 188
Category: Article
ISSN: 0031-8965
DOI: 10.1002/1521-396x(200112)188:3<983::aid-pssa983>3.0.co;2-n

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✦ Synopsis

This paper describes structural and optical investigations of molecular beam epitaxy grown strained ZnSe/(Zn,Cd)Se quantum wells. Strain state, cadmium content, and quantum well layer thickness have a strong influence on the emission energy, which allows a luminescence tuning between 2.25 and 2.50 eV. Furthermore a ZnSe based microcavity structure completed with ZnS/YF 3 distributed Bragg mirrors was processed. These reflectors are an alternative to several epitaxial grown II-VI materials and other reported approaches with respect to oxide layers. A blueshift in the photoluminescence emission energy measured by angle resolved microcavity detuning indicates an influence of the cavity mode on the quantum well mode.

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