Optical and Structural Properties of Quantum Dots in Wide-Bandgap Semiconductors

✍ Scribed by Strassburg, M. ;Hoffmann, A. ;Krestnikov, I.L. ;Ledentsov, N.N.

• Publisher: John Wiley and Sons
• Year: 2001
• Tongue: English
• Weight: 129 KB
• Volume: 183
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/1521-396x(200101)183:1<99::aid-pssa99>3.0.co;2-a

✦ Synopsis

The optical and structural properties of ultrathin insertions in wide-bandgap semiconductors are studied. Structural investigations confirm that in nitride-based structures indium fluctuations lead to the formation of nano-islands. The zero-dimensional character in nitride-and II-VI-based quantum dot structures is demonstrated by its typical behaviour (splitting of the polarisation, optical gain mechanisms resulting from localised states, surface lasing without high-quality Bragg reflectors, etc.). Practical device applications of the structures based on ultrathin insertions for non-traditional devices are discussed.