Growth ofm-GaN layers by epitaxial lateral overgrowth from sapphire sidewalls

✍ Scribed by Okada, Narihito ;Kawashima, Yuji ;Tadatomo, Kazuyuki

• Book ID: 105365220
• Publisher: John Wiley and Sons
• Year: 2009
• Tongue: English
• Weight: 350 KB
• Volume: 206
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200880930

✦ Synopsis

Abstract

Nonpolar m ‐plane GaN layers were fabricated by epitaxial lateral overgrowth from etched sapphire sidewalls. The m ‐plane GaN layers with c ‐direction growth were grown from patterned c ‐plane and a ‐plane sapphire substrates with a ‐plane or c ‐plane sidewalls using a low‐temperature buffer layer. The growth of GaN from the surface was prevented by a SiO~2~ mask, and that from the bottom of grooves was also prevented by deep grooves. Thus, the growth orientation relative to the surface of the GaN layer was determined by the growth of the GaN layer from the sapphire sidewalls. Consequently, m ‐plane GaN layers were grown on c ‐plane sapphire with a ‐plane sidewalls or on a ‐plane sapphire with c ‐plane sidewalls with the terrace regions covered with a SiO~2~ mask and deep grooves. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)