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Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence

✍ Scribed by A. S. Usikov; V. V. Tret’yakov; V. V. Lundin; Yu. M. Zadiranov; B. V. Pushnyi; S. G. Konnikov

Book ID: 110123926
Publisher: SP MAIK Nauka/Interperiodica
Year: 1999
Tongue: English
Weight: 425 KB
Volume: 25
Category: Article
ISSN: 1063-7850
DOI: 10.1134/1.1262443

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