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EBIC investigations of GaN layers prepared by epitaxial lateral overgrowth

✍ Scribed by P. S. Vergeles; A. V. Govorkov; A. Ya. Polyakov; N. B. Smirnov; E. B. Yakimov

Book ID
110202965
Publisher
Pleiades Publishing
Year
2008
Tongue
English
Weight
193 KB
Volume
2
Category
Article
ISSN
1027-4510

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## Abstract Nonpolar __m__ ‐plane GaN layers were fabricated by epitaxial lateral overgrowth from etched sapphire sidewalls. The __m__ ‐plane GaN layers with __c__ ‐direction growth were grown from patterned __c__ ‐plane and __a__ ‐plane sapphire substrates with __a__ ‐plane or __c__ ‐plane sidewal