Growth of Twinned β -Silicon Carbide Whiskers by the Vapor-Liquid-Solid Process
✍ Scribed by Remco de Jong; Ronald A. Mccauley; Paul Tambuyser
- Book ID
- 110823645
- Publisher
- John Wiley and Sons
- Year
- 1987
- Tongue
- English
- Weight
- 479 KB
- Volume
- 70
- Category
- Article
- ISSN
- 0002-7820
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📜 SIMILAR VOLUMES
Silicon carbide (3C-SiC) nanowhiskers were synthesized in a special vapor-solid process. In this process, silicon powder and carbon black were used as reactants, but they were separated by a thin and holed alumina plate so that the formation of SiC nanowhiskers is attributed to the reaction of gaseo
## Abstract Epitaxial silicon nanowhiskers (NWs) were grown on Si(111) substrates by electron beam evaporation (EBE) in a non‐ultra high vacuum environment (base pressure 1–2 × 10^–7^ Torr). Comparably low growth temperatures between 575 and 675 °C were realized making use of the gold driven 1D gro