Direct observation of the growth process of silicon carbide nanowhiskers by vapor–solid process

✍ Scribed by Guangyi Yang; Renbing Wu; Yi Pan; Jianjun Chen; Rui Zhai; Lingling Wu; Jing Lin

• Book ID: 104084696
• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 598 KB
• Volume: 39
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/j.physe.2007.03.005

✦ Synopsis

Silicon carbide (3C-SiC) nanowhiskers were synthesized in a special vapor-solid process. In this process, silicon powder and carbon black were used as reactants, but they were separated by a thin and holed alumina plate so that the formation of SiC nanowhiskers is attributed to the reaction of gaseous silicon with carbon black particles. X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were employed to characterize the product. Based on the characterizations, a formation mechanism of SiC nanowhiskers is proposed.