## Abstract Epitaxial silicon nanowhiskers (NWs) were grown on Si(111) substrates by electron beam evaporation (EBE) in a non‐ultra high vacuum environment (base pressure 1–2 × 10^–7^ Torr). Comparably low growth temperatures between 575 and 675 °C were realized making use of the gold driven 1D gro
Growth peculiarities during vapor–liquid–solid growth of silicon nanowhiskers by electron-beam evaporation
✍ Scribed by V. Sivakov; G. Andrä; C. Himcinschi; U. Gösele; D.R.T. Zahn; S. Christiansen
- Book ID
- 106020246
- Publisher
- Springer
- Year
- 2006
- Tongue
- English
- Weight
- 429 KB
- Volume
- 85
- Category
- Article
- ISSN
- 1432-0630
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