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Development of lateral faces during vapor-liquid-solid growth of silicon whiskers

✍ Scribed by V. A. Nebol’sin; A. A. Shchetinin; A. N. Korneeva; A. I. Dunaev; A. A. Dolgachev; T. I. Sushko; A. F. Tatarenkov

Book ID
110165672
Publisher
SP MAIK Nauka/Interperiodica
Year
2006
Tongue
English
Weight
287 KB
Volume
42
Category
Article
ISSN
0020-1685

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✍ Sivakov, V. ;Andrä, G. ;Gösele, U. ;Christiansen, S. 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 349 KB

## Abstract Epitaxial silicon nanowhiskers (NWs) were grown on Si(111) substrates by electron beam evaporation (EBE) in a non‐ultra high vacuum environment (base pressure 1–2 × 10^–7^ Torr). Comparably low growth temperatures between 575 and 675 °C were realized making use of the gold driven 1D gro