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Critical parameters of the vapor-liquid-solid growth of silicon whiskers

✍ Scribed by V. A. Nebol’sin; A. I. Dunaev; A. A. Dolgachev; M. A. Zavalishin; G. A. Sladkikh; V. V. Korneeva; A. Yu. Eframeev

Book ID
110166967
Publisher
SP MAIK Nauka/Interperiodica
Year
2010
Tongue
English
Weight
757 KB
Volume
47
Category
Article
ISSN
0020-1685

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## Abstract Epitaxial silicon nanowhiskers (NWs) were grown on Si(111) substrates by electron beam evaporation (EBE) in a non‐ultra high vacuum environment (base pressure 1–2 × 10^–7^ Torr). Comparably low growth temperatures between 575 and 675 °C were realized making use of the gold driven 1D gro