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Growth of strain-compensated InGaAs/GaAsP multiple quantum wells by MOVPE

✍ Scribed by Yongqin Yu; Xiaoyang Zhang; Baibiao Huang; Jiyong Wei; Hailong Zhou; Jiaoqing Pan; Xiaoyan Qin; Zhongxiang Ren

Book ID
115366650
Publisher
Optics InfoBase
Year
2003
Tongue
English
Weight
456 KB
Volume
1
Category
Article
ISSN
1671-7694

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We have shown that strain compensation is effective in increasing the critical layer thickness or the critical number of periods in a multiple quantum well (MQW) structure and in improving thermal stability. Compared with a strain-uncompensated InAso.4Po.6/InP MQW (1.3% strain) on InP substrates, st