We report on the growth of epitaxial Fe/MgO heterostructures on Ge(0 0 1) by Molecular Beam Epitaxy. The better crystal quality and interfacial chemical sharpness at the oxide-semiconductor interface have been obtained by growing MgO at room temperature, followed by a post-annealing at 773 K, on top
Growth of single-crystalline, atomically smooth MgO films on Ge(0 0 1) by molecular beam epitaxy
β Scribed by Wei Han; Yi Zhou; Yong Wang; Yan Li; Jared.J.I. Wong; K. Pi; A.G. Swartz; K.M. McCreary; Faxian Xiu; Kang L. Wang; Jin Zou; R.K. Kawakami
- Book ID
- 108165973
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 524 KB
- Volume
- 312
- Category
- Article
- ISSN
- 0022-0248
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