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Growth of silicon carbide from liquid silicon by a travelling heater method

✍ Scribed by K. Gillessen; W. Von Münch


Publisher
Elsevier Science
Year
1973
Tongue
English
Weight
927 KB
Volume
19
Category
Article
ISSN
0022-0248

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Epitaxial growth of silicon carbide laye
✍ Dr. Yu. A. Vodakov; E. N. Mokhov; M. G. Ramm; A. D. Roenkov 📂 Article 📅 1979 🏛 John Wiley and Sons 🌐 English ⚖ 826 KB

The growth kinetics of Sic epitaxial layers has been investigated by sublimation sandwichmethod in vacuum a t temperature range from 1600 to 2100 O C . The limiting stages of the crystallization process have been determined. Silicon deficit in the growth cell was shown to result in the great retardi