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Growth of polycrystalline silicon films on glass by high-temperature chemical vapour deposition

✍ Scribed by Bergmann, R B; Brendel, R; Wolf, M; Lölgen, P; Krinke, J; Strunk, H P; Werner, J H


Book ID
121431852
Publisher
Institute of Physics
Year
1997
Tongue
English
Weight
233 KB
Volume
12
Category
Article
ISSN
0268-1242

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Epitaxial silicon growth on porous silic
✍ C. Oules; A. Halimaoui; J.L. Regolini; R. Herino; A. Perio; D. Bensahel; G. Bomc 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 605 KB

Epitaxial growth of silicon on porous silicon layers has been obtained at a low temperature (820 °C) in a reduced pressure vapour phase epitaxy reactor, using Sill 4 as the reactive gas and a lampheating .Zvstem allowing rapid thermal processing. Silicon epitaxv has been studied on different porous