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Growth of InN quantum dots by MOVPE

✍ Scribed by S. Ruffenach; B. Maleyre; O. Briot; B. Gil

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
278 KB
Volume
2
Category
Article
ISSN
1862-6351

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Growth of N-polarity InN by ArF-laser as
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## Abstract In this paper, the employment of the ArF excimer‐laser assisted nitridation of sapphire substrate is studied in the ArF‐laser assisted MOVPE (la‐MOVPE) of InN. An ArF excimer laser with an energy 50 mJ/pulse and a repetition rate 20Β Hz is introduced parallel to the substrate surface. Th

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## Abstract MOVPE growth of InN on sapphire substrate is reviewed focusing on the critical growth parameters. Based on our in situ spectroscopic ellipsometry results obtained during growth and the results found in the literature we suggest a strategy for successful growth of high quality InN layers