✦ LIBER ✦

Highly uniform InGaAs quantum dots ( ≈ nm) grown by MOVPE on GaAs

✍ Scribed by J. Oshinowo; M. Nishioka; S. Ishida; Y. Arakawa

Publisher: Elsevier Science
Year: 1994
Tongue: English
Weight: 122 KB
Volume: 145
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(94)91181-9

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Optimising uniformity of InAs/(InGaAs)/G

Optimising uniformity of InAs/(InGaAs)/GaAs quantum dots grown by metal organic vapor phase epitaxy

✍ Linda Höglund; E. Petrini; C. Asplund; H. Malm; J.Y. Andersson; P.O. Holtz 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 491 KB

InAs quantum dot formation on GaAs pyram

InAs quantum dot formation on GaAs pyramids by selective area MOVPE

✍ Tetsuo Umeda; Kazuhide Kumakura; Junichi Motohisa; Takashi Fukui 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 592 KB

Photoexcited carrier dynamics in aligned

Photoexcited carrier dynamics in aligned InAs/GaAs quantum dots grown on strain-relaxed InGaAs layers

✍ J. Siegert; A. Gaarder; S. Marcinkevičius; R. Leon; S. Chaparro; S.R. Johnson; Y 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 379 KB

Fabrication and characterization of stra

Fabrication and characterization of strained InGaAs quantum wires grown on high index V-grooved GaAs substrates by LP-MOVPE

✍ A. Passaseo; R. Rinaldi; M. De Giorgi; R. Cingolani; M. Catalano; A. Taurino 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 263 KB

Self-ordered InGaAs/GaAs quantum wires (QWRs) were obtained on (100) GaAs Vgrooved substrates by low-pressure metal-organic vapor phase epitaxy. Different structural and optical properties of compressively strained InGaAs wires grown on grooves exhibiting (111)A-like and (311)-like oriented facets w

Electro-optic processes in InGaAs/GaAs q

Electro-optic processes in InGaAs/GaAs quantum wires grown by MBE on patterned substrates

✍ R. Rinaldi; M. DeVittorio; R. Cingolani; U. Marti; F.K. Reinhart 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 70 KB

We have investigated the electro-optic properties of strained InGaAs/GaAs quantum wires of lateral width below 20 nm by means of electroluminescence and luminescence under electric bias. A novel room temperature electroluminescence is observed in MBE grown samples. The optical spectra reveal a stron

Terrace length commensurability and surf

Terrace length commensurability and surface reconstruction in highly strained InGaAs/GaAs quantum wells grown on vicinal substrates

✍ C. López; R. Mayoral; F. Meseguer; J.A. Porto; J. Sánchez-Dehesa; N. Grandjean; 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 188 KB

We present a study of the electronic properties of \(\mathrm{In}_{x} \mathrm{Ga}_{1-x} \mathrm{As} / \mathrm{GaAs}\) quantum wells when grown on vicinal substrates, based on photoluminescence (PL) and PL excitation experiments under high magnetic field. The samples measured have a wide range of In c