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InAs quantum dot formation on GaAs pyramids by selective area MOVPE

✍ Scribed by Tetsuo Umeda; Kazuhide Kumakura; Junichi Motohisa; Takashi Fukui


Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
592 KB
Volume
2
Category
Article
ISSN
1386-9477

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Site-selective growth of self-assembled
✍ M. Mehta; D. Reuter; A. Melnikov; A.D. Wieck; A. Remhof πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 373 KB

A site-selective growth of self-organized InAs quantum dots (QDs) employing a combination of in-situ focused ion beam (FIB) implantation and self-organized molecular beam epitaxy (MBE) growth has been successfully demonstrated. First, a buffer layer of GaAs was grown by MBE before a square lattice o