Growth of InGaN self-assembled quantum dots and their application to lasers
β Scribed by Tachibana, K.; Someya, T.; Arakawa, Y.
- Book ID
- 117866455
- Publisher
- IEEE
- Year
- 2000
- Tongue
- English
- Weight
- 441 KB
- Volume
- 6
- Category
- Article
- ISSN
- 1077-260X
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract A trial was carried out to fabricate selfβassembled InGaN QD structures through periodic interruption growth, which is new method for supplying the source materials in a metal organic chemical vapor deposition (MOCVD) reactor. The growth of InGaN QDs was interrupted periodically by stop
Different techniques for the preparation of patterned GaAs substrates for subsequent overgrowth are presented, including focused ion beam direct writing and laser holography followed by wet chemical or dry etching. GaAs-based buffer layers were grown on the patterns and consequently covered with sel