✦ LIBER ✦

Nano-patterning and growth of self-assembled quantum dots

✍ Scribed by M. Schramboeck; A.M. Andrews; T. Roch; W. Schrenk; A. Lugstein; G. Strasser

Publisher: Elsevier Science
Year: 2006
Tongue: English
Weight: 176 KB
Volume: 37
Category: Article
ISSN: 0026-2692
DOI: 10.1016/j.mejo.2006.05.015

No coin nor oath required. For personal study only.

✦ Synopsis

Different techniques for the preparation of patterned GaAs substrates for subsequent overgrowth are presented, including focused ion beam direct writing and laser holography followed by wet chemical or dry etching. GaAs-based buffer layers were grown on the patterns and consequently covered with self-assembled quantum dots (QDs). The effect of a strained InGaAs layer grown directly on the patterned substrates and its influence on QD formation and ordering is shown. The dot density, lateral distribution and size distribution of the dots are measured using atomic force microscopy. A comparison of the growth of QDs on patterned and unpatterned substrates indicates that on patterned substrates a higher QD density at the same InAs deposition can be achieved.

📜 SIMILAR VOLUMES

Self-Assembled Growth of GaN Quantum Dot

Self-Assembled Growth of GaN Quantum Dots Using Low-Pressure MOCVD

✍ M. Miyamura; K. Tachibana; T. Someya; Y. Arakawa 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 85 KB 👁 2 views

Size quantization patterns in self-assem

Size quantization patterns in self-assembled InAs/GaAs quantum dots

✍ M. Colocci; F. Bogani; L. Carraresi; R. Mattolini; A. Bosacchi; S. Franchi; P. F 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 136 KB

Molecular beam epitaxy has been used for growing self-assembled InAs quantum dots. A continuous variation of the InAs average coverage across the sample has been obtained by properly aligning the (001) GaAs substrate with respect to the molecular beam. Excitation of a large number of dots (laser spo

Site-selective growth of self-assembled

Site-selective growth of self-assembled InAs quantum dots on focused ion beam patterned GaAs

✍ M. Mehta; D. Reuter; A. Melnikov; A.D. Wieck; A. Remhof 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 373 KB

A site-selective growth of self-organized InAs quantum dots (QDs) employing a combination of in-situ focused ion beam (FIB) implantation and self-organized molecular beam epitaxy (MBE) growth has been successfully demonstrated. First, a buffer layer of GaAs was grown by MBE before a square lattice o

Zeeman Effect in Self-Assembled Quantum

Zeeman Effect in Self-Assembled Quantum Dots

✍ J. López Gondar; B. Costa; C. Trallero-Giner; G. Marques 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 136 KB 👁 2 views

STM-Cathodoluminescence of Self-Assemble

STM-Cathodoluminescence of Self-Assembled InGaAs Quantum Dots

✍ Markmann, M. ;Zrenner, A. ;Böhm, G. ;Abstreiter, G. 📂 Article 📅 1997 🏛 John Wiley and Sons 🌐 English ⚖ 158 KB 👁 2 views

Luminescence spectroscopy of InAs self-a

Luminescence spectroscopy of InAs self-assembled quantum dots

✍ P.D. Wang; J.L. Merz; G. Medeiros-Ribeiro; S. Fafard; P.M. Petroff; H. Akiyama; 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 180 KB

We present selective photoluminescence and photoluminescence excitation spectroscopy on self-assembled quantum dots. These spectroscopic techniques reveal a large apparent 'Stokes' shift in In(Ga)As-Ga(Al)As self-assembled quantum dots. We demonstrate that the first two excited states observed in PL